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md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the md7ic2250n wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 mhz. this multi--stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts, i dq1(a+b) =80ma,i dq2(a+b) = 520 ma, p out = 5.3 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 2110 mhz 31.2 17.0 --48.3 2140 mhz 31.1 16.8 --49.3 2170 mhz 31.1 16.8 --50.1 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 63 watts cw output power (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 54 watts cw features ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? designed for digital predistortion error correction systems ? optimized for doherty applications ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. quiescent current temperature compensation (1) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a quiescent current temperature compensation (1) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b v ds1a rf ina nc rf inb rf out1 /v ds2a 1 2 3 4 7 8 14 v gs1b 9 10 11 v gs2a v gs1a nc nc v gs2b nc v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. 2110--2170 mhz, 5.3 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifiers md7ic2250nr1 MD7IC2250GNR1 md7ic2250nbr1 case 1618--02 to--270 wb--14 plastic md7ic2250nr1 case 1621--02 to--270 wb--14 gull plastic MD7IC2250GNR1 case 1617--02 to--272 wb--14 plastic md7ic2250nbr1 document number: md7ic2250n rev. 0, 12/2010 freescale semiconductor technical data ? freescale semiconductor, inc., 2010. a ll rights reserved.
2 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 28 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 74 c, 5.3 w cw, 2170 mhz stage 1, 28 vdc, i dq1(a+b) =80ma stage 2, 28 vdc, i dq2(a+b) = 520 ma case temperature 80 c, 50 w cw, 2170 mhz stage 1, 28 vdc, i dq1(a+b) =80ma stage 2, 28 vdc, i dq2(a+b) = 520 ma r jc 5.3 1.1 5.0 0.95 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) ii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 -- on characteristics gate threshold voltage (4) (v ds =10vdc,i d =23 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =80ma) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1(a+b) = 80 ma, measured in functional test) v gg(q) 6.0 7.0 8.0 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 -- on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 150 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2(a+b) = 520 ma) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2(a+b) = 520 ma, measured in functional test) v gg(q) 5.5 6.3 7.5 vdc drain--source on--voltage (1) (v gs =10vdc,i d =1adc) v ds(on) 0.1 0.24 1.2 vdc functional tests (2,3) (in freescale wideband 2110--2170 test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma, i dq2(a+b) = 520 ma, p out = 5.3 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 30.0 31.1 34.0 db power added efficiency pae 15.0 16.8 ? % adjacent channel power ratio acpr ? --50.1 --47.0 dbc input return loss irl ? -- 1 4 -- 9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma,i dq2(a+b) = 520 ma, p out = 5.3 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 2110 mhz 31.2 17.0 --48.3 -- 9 2140 mhz 31.1 16.8 --49.3 -- 1 1 2170 mhz 31.1 16.8 --50.1 -- 1 4 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in str aight lead configuration before any lead forming operation is applied. (continued)
4 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma,i dq2(a+b) = 520 ma, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 54 ? w imd symmetry @ 50 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 16 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz quiescent current accuracy over temperature (1,2) with 4.7 k ? gate feed resistors (--30 to 85 c) stage 1 stage 2 ? i qt ? ? 1.5 5.0 ? ? % gain flatness in 60 mhz bandwidth @ p out =5.3wavg. g f ? 0.1 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.028 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.028 ? db/ c 1. each side of device measured separately. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf.select doc umentation/application notes -- an1977 or an1987.
md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 5 rf device data freescale semiconductor figure 3. md7ic2250nr1(gnr1)(nbr1 ) test circuit component layout r2 v d1a md7ic2250n rev. 2 v g2a v g1a r1 c1 c12 c5 c18 c16 c19 c17 c20 v g1b v g2b v d1b r3 r4 c2 c13 c6 c8 c15 c4 v d2 c10 c9 c21 c11 c14 c7 c3 v d2 cut out area table 6. md7ic2250nr1(gnr1)( nbr1) test circuit component designations and values part description part number manufacturer c1, c2, c3, c4 10 f chip capacitors grm55dr61h106ka88l murata c5, c6, c7, c8 5.6 pf chip capacitors atc600f5r6bt250xt atc c9, c10 2.0 pf chip capacitors atc600f2r0bt250xt atc c11 33 pf chip capacitor atc600f330jt250xt atc c12, c13 1.0 f chip capacitors grm31mr71h105ka88l murata c14, c15, c16, c17, c18, c19 4.7 f chip capacitors grm31cr71h475ka12l murata c20 1.8 pf chip capacitor atc600f1r8bt250xt atc c21 1.5 pf chip capacitor atc100b1r5bt500xt atc r1, r2, r3, r4 4.7 k ? chip resistors crcw12064k70fkea vishay pcb 0.020 , r =3.5 rf35a2 taconic
6 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 4. possible circuit topologies
md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 7 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 2060 irl g ps acpr f, frequency (mhz) figure 5. power gain, power added efficiency, irl and acpr broadband performance @ p out = 5.3 watts avg. -- 2 1 -- 5 -- 9 -- 1 3 -- 1 7 31.7 -- 5 2 16.8 16.6 16.4 16.2 -- 4 7 -- 4 8 -- 4 9 -- 5 0 pae, power added efficiency (%) g ps , power gain (db) 2080 2100 2120 2140 2160 2180 2200 2220 16 -- 5 1 -- 2 5 acpr (dbc) figure 6. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 50 w (pep), i dq1(a+b) =80ma i dq2(a+b) = 520 ma, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz pae figure 7. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) output compression at 0.01% probability on ccdf (db) 0 60 50 40 30 20 10 pae, power added efficiency (%) acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 33 g ps , power gain (db) 32.5 32 31.5 31 30.5 30 g ps pae 31.6 31.5 31.4 31.3 31.2 31.1 31 30.9 30.8 30.7 single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out =5.3w(avg.),i dq1(a+b) =80ma i dq2(a+b) = 520 ma im3--l 1 -- 1 -- 3 -- 5 10 0 -- 2 -- 4 5 15 20 30 -- 1 d b = 1 3 w -- 2 d b = 1 8 w -- 3 d b = 2 4 w 25 v dd =28vdc,i dq1(a+b) =80ma,i dq2(a+b) = 520 ma f = 2140 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf
8 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 8. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 24 36 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 34 32 10 100 10 -- 6 0 acpr (dbc) 30 28 26 0 -- 3 0 -- 4 0 -- 5 0 v dd =28vdc,i dq1(a+b) =80ma,i dq2(a+b) = 520 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf figure 9. broadband frequency response 10 40 1500 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1(a+b) =80ma i dq2(a+b) = 520 ma 30 25 20 1650 gain (db) 35 gain 1800 1950 2100 2250 2400 2550 2700 irl -- 5 0 10 0 -- 1 0 -- 2 0 -- 3 0 irl (db) 15 --40 pae 2170 mhz 2110 mhz 2140 mhz 2110 mhz 2140 mhz 2170 mhz
md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 9 rf device data freescale semiconductor w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 10. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 11. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
10 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 v dd =28vdc,i dq1(a+b) = 80 ma ,i dq2(a+b) = 520 ma, p out =5.3wavg. f mhz z source ? z load ? 2060 17.0 + j4.49 5.12 -- j3.98 2080 17.2 + j4.94 5.07 -- j4.10 2100 17.4 + j5.41 5.00 -- j4.23 2120 17.7 + j5.88 4.90 -- j4.36 2140 17.9 + j6.36 4.76 -- j4.88 2160 18.2 + j6.84 4.59 -- j4.60 2180 18.4 + j7.33 4.38 -- j4.69 2200 18.7 + j7.84 4.15 -- j4.77 2220 19.0 + j8.35 3.91 -- j4.82 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 12. series equivalent source and load impedance z source z load input matching network device under test output matching network
md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 11 rf device data freescale semiconductor alternative peak tune load pull characteristics 15 p in , input power (dbm) 45 43 41 16 18 17 19 actual ideal 46 44 40 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 42 47 49 50 51 14 13 12 9 20 11 10 48 2170 mhz 2110 mhz 2140 mhz 2110 mhz 2140 mhz 2170 mhz v dd =28 v dc, i dq1a =40ma,i dq2a = 260 ma, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) p1db p3db watts dbm watts dbm 2110 38 45.8 44 46.4 2140 37 45.7 44 46.4 2170 37 45.7 44 46.4 test impedances per compression level f (mhz) z source ? z load ? 2110 p1db 65.6 + j43.6 7.09 -- j14.1 2140 p1db 58.7 + j39.7 6.88 -- j14.0 2170 p1db 52.4 + j32.5 6.99 -- j14.5 figure 13. pulsed cw output power versus input power @ 28 v note: measurement made on a single pat h of the device under class ab conditions.
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md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 21 rf device data freescale semiconductor product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 dec. 2010 ? initial release of data sheet
22 rf device data freescale semiconductor md7ic2250nr1 md7ic 2250gnr1 md7ic2250nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: md7ic2250n rev. 0, 12/2010

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